It has both the advantages of SRAM and DRAM. Static RAM uses a completely different technology. Explanation: Random Access Memory is the primary storage which can access data only when it is powered up. SRAM uses bistable latching circuitry made of Transistors/MOSFETS to store each bit. Static Random Access Memory, also known as static RAM or SRAM is a type of RAM that stores data bits in a static form and retains the data as long as the power is supplied. A. This makes static RAM significantly faster than dynamic RAM. Figure 9-2 Functional Equivalent of a Static RAM Cell 2n word by m bits static RAM n Address CS OE WE m Data input / output CS OE WE D G Data In Q WR SEL Data Out G = 1 → Q follows D G = 0 → data is latched. 6 MOS transistors. The forbidden energy gap between the valence band and conduction band will be least in case of. Which of the following ahs refreshes control mechanism? Machine Instructions And Addressing Modes. Row Decoder A 10 A 4 Input Data Control I/O 7 I/O 0 Column Decoder Column I/O A 3 A 2 A 1 A 0 The batch is connected to two bit lines by transistors T1 and T2. Which of the following is the main factor which determines the memory capacity? Explanation: The low power consumption makes SRAM easily convertible to non-volatile memory, by adding a small battery it can retain its data even when the main power is lost. B-block who uses a 7 cell frequency reuse pattern with 3 sectors per cell • Use a Frequency Chart – available from FCC web site – Groups frequencies into 21 categories Cells 1-7 and sectors A-B in each cell Telcom 2720 20 Traffic Engineering • Given or N = T/K traffic channels per cell – what is GoS or how many users can be C. 3. 4. Programmable interconnections are available for users or designers to perform given functions easily. The minimum number of MOS transistors required to make a dynamic RAM cell is. Static RAM Fault Models: SAF/TF Stuck-At Fault (SAF) Cell (line) SA0 or SA1 – A stuck-at fault (SAF) occurs when the value of a cell or line is always 0 (a stuck-at-0 fault) or always 1 (a stuck-at-1 fault). ANSWER: Gets blocked. Static Random Access Memory (SRAM) is a type of volatile semiconductor memory to store binary logic '1' and '0' bits. Static RAM (SRAM, pronounced “es-ram”) is static because stored bits do not need to be refreshed. Explanation: Video RAM is a derivative of DRAM. Depending on how memory cells are realized by an electronic circuit, RAMs are further classified into two types—static RAM (SRAM) and dynamic RAM (DRAM). It is designed for low power consumption and used in preference .DRAM is cheaper than SRAM but it is based on refresh circuitry as it loses charge since the capacitor is the storage element. Explanation: The chip capacity is dependent on the number of transistors which can be fabricated on the silicon, and DRAM offers more storage capacity than SRAM. The solved questions answers in this Test: SRAM And DRAM quiz give you a good mix of easy questions and tough questions. MCQ (Single Correct Answer) GATE ECE 2017 Set 2 ... Each cell of a static Random Access Memory Contains. Each row of memory cells share a common 'Word Enable' line, while each column of cells share a common 'bit' line. 2. A. The 2147 4k × 1 static RAM contains 4096 storage locations storing one bit each. 6-Transistor SRAM (Static RAM) 7 Large on-chip memories built from arrays of static RAM bitcells, where each bit cell holds a bistable (cross-coupled inverters) and two access transistors. This contains 20 Multiple Choice Questions for Computer Science Engineering (CSE) Test: SRAM And DRAM (mcq) to study with solutions a complete question bank. Explanation: Both SRAM and DRAM are volatile memories and flash memory and EPROM are non-volatile memories. Gets blocked c. Is kept on waiting d. All of the above. These computer memory questions and answers are very important for bank exams and other competitive exams. This is a self-reinforcing state , so it can go on forever. Assertion (A): A JFET can be used as a current source.Reason (R): In beyond pinch off region the current in JFET is nearly constant. Which of the following can easily convert to a non-volatile memory?a) SRAMd) DRAM. Transition Fault (TF) B. Its individual memory cells can be accessed in any sequence, and therefore it is called the random access memory. Both A and R are true but R is not a correct explanation of A, For a P-N diode, the number of minority carriers crossing the junction depends on, C. Rate of thermal generation of electron hole pairs, Related Questions on Electronic Devices and Circuits, More Related Questions on Electronic Devices and Circuits. Each cell of a static RAM contains (a) 4 MOS transistors (b) 4 MOS transistors and 1 capacitor (c) 2 MOS transistors (d) 4 MOS transistors and 2 … Explanation: DRAM is used in PCs and Embedded systems because of its low cost. a. Explanation: Trench capacitor can store from 4-256 Mb but planar capacitor can store up to 1 Mb. Unlike dynamic RAM, it does not need to be refreshed. Gets transferred to another cell b. The solved questions answers in this Test: SRAM And DRAM quiz give you a good mix of easy questions and tough questions. Other articles where Static random-access memory is discussed: computer memory: Semiconductor memory: Static RAM (SRAM) consists of flip-flops, a bistable circuit composed of four to six transistors. But non-volatile SRAM can access data even when the power supply is lost. Which storage element is used by MAC and IBM PC? Which of the following can access data even when the power supply is lost? It contains ten thousand to more than a million logic gates with programmable interconnection. Other clocking and access logic factored out into periphery Bit Bit Wordline. This problem has been solved! Computer Science Engineering (CSE) Explanation: Four to six transistors are used to store a single bit of data and form a flip-flop logic gate and thus SRAM is faster in accessing data. What is the size of a trench capacitor in DRAM? 19: SRAM CMOS VLSI Design 4th Ed. DDR (Double Data Rate) Check Latest Price memories are able to carry out two operations in each clock cycle. A spreadsheet is a computer application that is a copy of a paper that calculates a worksheet. Explanation: SRAM will retain data as long it is powered up and it does not need to be refreshed as DRAM. The cells in each column are connected to Sense / Write circuit by two bit lines. 34) In a fixed channel assignment strategy. Which of the following memory technology is highly denser? Explanation: 1T-RAM is a pseudo-static RAM which is developed by MoSyS,Inc. ... Each cell of a Static Random Access Memory contains a. Figure 5.47 shows an SRAM bit cell. MAH EE271 Lecture 11 6 Small Memory Cell Often need to have a large number of bits stored: • In some cases more bits are better • Willing to take some time to optimize cell • Have enough cells it is ok to make peripheral circuits more complex Lead to many innovative cell designs • 6T RAM cells • 4T RAM cell with poly loads • 1T DRAM cell • And lots of strange layouts Explanation: Stacked-cell can store greater than 1 Gb. Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. This contains 20 Multiple Choice Questions for Computer Science Engineering (CSE) Test: SRAM And DRAM (mcq) to study with solutions a complete question bank. 1. Unlike those of SDR (Single Data Rate) Check Latest Price , which only execute a read or write operation.To make this possible, the DDR chips are activated twice in each cycle of the clock signal, either by level (high or low) or by an edge (rising or falling). MCQ (Single Correct Answer) GATE ECE 1995. In static RAM, a form of flip-flop holds each bit of memory (see How Boolean Gates Work for detail on flip-flops). DRAM has storage element as a capacitor whose charge loses gradually thereby losing data. There are four chips each of 1024 bytes connected to a 16 bit address bus as shown in the figure below. B. Static random access memories (SRAM) - one-bit memory cells use bistable latches for data storage and hence, unlike for dynamic RAM, there is no need to periodically refresh memory contents. Static timing analysis (STA) is a method of validating the timing performance of a design by checking all possible paths for timing violations. Each cell of a static Random Access memory contains a) 6 MOS transistor b) 4 MOS transistor, 2 capacitor c) 2 MOS transistor, 4 capacitor d) 1 MOS transistor and 1 capacitor Which one of the following is a storage element in SRAM? 10. The full form of FPGA is “Field Programmable Gate Array”. For a NPN bipolar transistor, what is the main stream of current in the base region? There are I/O blocks, which are designed and numbered according to function. A Dynamic RAM cell which holds 5 volts has to be refreshed every 20 ms, so that the stored voltage does not fall by more than 0.5 volts. Each cell of a static RAM contains (a) 4 MOS transistors (b) 4 MOS transistors and 1 capacitor (c) 2 MOS transistors (d) 4 MOS transistors and 2 … D. 4. Explanation: TTL or transistor-transistor logic which is a type of bipolar junction transistor access data very fastly but consumes lots of power whereas CMOS is used in low power consumption. This form of semiconductor memory gains its name from the fact that data is held in there in a static fashion, and does not need to be dynamically updated as in the case of DRAM memory. SRAM or Static Random Access Memory is a form of semiconductor memory widely used in electronics, microprocessor and general computing applications. It is used in many applications like networking, aerospace etc. The data bit is stored on cross-coupled inverters like those described in Section 3.2.Each cell has two outputs, bitline and bitline ¯. SRAM gives fast access to data, but it is physically relatively large.… Once a flip-flop stores a bit, it keeps that value until the opposite value is stored in it. Both A and R are true and R is correct explanation of A, B. Explanation: Six MOSFETs are required for a typical SRAM. RAMs are divided in to two categories as Static RAM (SRAM) and Dynamic RAM (DRAM). By continuing, I agree that I am at least 13 years old and have read and agree to the. Dynamic RAM is the most commonly used RAM and is also considerably cheaper, but even static RAM has benefits. Explanation: CMOS is complementary metal oxide semiconductor which is used by MAC and IBM PC as storage element because it contains configuration data of SRAM and is battery back-up to ensure that it is powered up when the computer is switched off. Explanation: Pseudo RAM uses DRAM cells because of its higher memory density and it have refresh control which is an additional function of DRAM and is suitable for low power consumption. Answer: (d) Spreadsheet Explanation: Spread Sheet is the most appropriate for performing numerical and statistical calculation. Which of the following capacitor can store more data in DRAM? Relatively less expensive RAM is DRAM, due to the use of one transistor and one capacitor in each cell, as shown in the below figure., where C is the capacitor and T is the transistor. PROM, EPROM, and EEPROM are non-volatile memories. When the wordline is asserted, both nMOS transistors turn on, and data values are transferred to or from the bitlines. EduRev is a knowledge-sharing community that depends on everyone being able to pitch in when they know something. SRAM is volatile memory; data is lost when power is removed.. Explanation: Miniature Card is a SRAM memory card proposed by Intel in the 1980s but it was no longer manufactured. Explanation: DRAM uses a small capacitor whose voltage represents a binary zero which is used a storage element in DRAM in which a single transistor cell is used to store each bit of data. Planar capacitor can store up to 1 Mb and trench capacitor can store 4-256 Mb. For each module of logic level compositi… DRAM Memory Cell: Though SRAM is very fast, but it is expensive because of its every cell requires several transistors. This mock test of Test: SRAM And DRAM for Computer Science Engineering (CSE) helps you for every Computer Science Engineering (CSE) entrance exam. It functions like a DRAM and has additional functions to access data for video hardware for creating the display. 7 people answered this MCQ question is the answer among for the mcq Each cell of a static Random Access memory contains 4 Array Architecture 2n words of 2m bits each If n >> m, fold by 2k into fewer rows of more columns Good regularity – easy to design Very high density if good cells … Explanation: DRAM is highly denser and cheaper because it only uses a single capacitor for storing one bit. Each bit of SRAM is stored in four transistors which form two cross-coupled inverters. How Many 2147 RAM Memory Chips Are Needed To Configure A 4k × 8 Memory? You can find other Test: SRAM And DRAM extra questions, A flip-flop for a memory cell takes 4 or 6 transistors along with some wiring, but never has to be refreshed. [One] [Four] [eight] 7 people answered this MCQ question is the answer among One,Four,eight for the mcq The 2147 4K × 1 static RAM contains 4096 storage locations storing one bit each. Fig: Static RAM cell Two inverters are cross connected to form a batch. A typical model FPGA chip is shown in the given figure. Which of the following can easily convert to a non-volatile memory? CHECK ANSWER. Explanation: DRAM is said to be more volatile because it has a capacitor as its storage element in which the data disappears when the capacitor loses its charge so even when the device is powered the data can be lost. See the answer. STA breaks a design down into timing paths, calculates the signal propagation delay along each path, and checks for violations of timing constraints inside the design and at the input/output interface. Which memory storage is widely used in PCs and Embedded Systems? students definitely take this Test: SRAM And DRAM exercise for a better result in the exam. – A test that detects all SAFs guarantees that from each cell, a 0 and a 1 must be read. Schematics of one-bit cell for static random access memory* In order to write data into SRAM cell it is required to activate line SEL and provide bit of Explanation: SRAM access data in approximately 4ns because of its flip-flop arrangement of transistors whereas the data access time in DRAM is approximately 60ns since it has a single capacitor for one-bit storage. Faster and reliable than DRAM, it is widely used in electronics, microprocessor and general computing applications. Static RAM vs Dynamic RAM (SRAM vs DRAM) RAM (Random Access Memory) is the primary memory used in a computer. Dynamic and static RAM are two types of RAMs that is simultaneously used by the computer in order to store an access data. _____ 2147 RAM memory chip(s) is/are needed to configure an 8K × 8 memory Which type of storage element of SRAM is very fast in accessing data but consumes lots of power? Each cell of a static RAM consists of a transistor circuit (called flip-flop) realized in CMOS, as shown in Fig. A dynamic RAM chip holds millions of memory cells, each made up of a transistor and a capacitator. long questions & short questions for Computer Science Engineering (CSE) on EduRev as well by searching above. Compared to Dynamic RAM (DRAM), SRAM does't have a capacitor to store the data, hence SRAM works without refreshing. Static Random Access Memory (Static RAM or SRAM) is a type of RAM that holds data in a static form, that is, as long as the memory has power. A. Each cell is assigned a predetermined set of frequencies b. In which of the memories, does the data disappears? Here I am sharing various types of mcq on computer memory because many students are confused to solve multiple choice questions on computer in the examination. It displays several cells that together form a mesh that includes rows and columns, each cell containing alphanumeric text, numeric values, or formulas. SRAM, flash memory and EEPROM are more costly than DRAM. The basic storage element of an SRAM is a circuit that consists of 4 to 6 transistors. What is approximate data access time of SRAM? Why is SRAM more preferably in non-volatile memory? There are two types of RAM. Static RAM has a pair of transistors forcing each other on and off, so there are electric fields turning on channels to conduct and turn off the opposite transistor. Question: The 2147 4k × 1 Static RAM Contains 4096 Storage Locations Storing One Bit Each. The number of columns of such a memory array is known as the bit width of each word. Dram exercise for a better result in the figure below because it only a... 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